United States

IEEE WiPDA 2022

Managing EMI of SiC power electronics

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 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

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The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

tutorial

In this paper, an implantation-free 3 kV 4H-SiC Bipolar Junction Transistor (BJT) is designed, fabricated, and characterized. With a 40μm-wide Four-step Junction Termination Extension (JTE), an open base breakdown voltage (BVCEO) and an open emitter breakdown voltage (BVCBO) of more than 3000V are measured. The total width of the JTE is less than two times of the drift thickness (23μm), which can be considered as highly area efficient. The designed BJT has a 1.2μm narrow base width with 1×1017cm-3 doping, where implantation-free Ohmic contact was achieved. The BJT exhibits an excellent on-resistance of 6.7mΩ·cm2 for small size device and an on-resistance of 39.7mΩ·cm2 for large size device. The measured current gain for devices with additional anneal process is 21.

3kV 6.7MΩ·cm² 4H-SiC BJT with an Effective Junction Termination Extension (JTE)

High-speed and intelligent gate driver is the critical interface between power semiconductor devices and control signals to achieve low switching loss and intelligent protection. The proposed novel Source Turn-Off (STO) MOSFET is a driver integrated MOSFET architecture that can achieve ultra-fast turnon and turn-off operation beyond traditional voltage source gate driver approach. 1200V SiC STO half bridge was developed to demonstrate the concept. Faster switching speed and lower switching losses are demonstrated. The STO can be readily realized by using commercially available Si power MOS IC which can further enable intelligent functionalities such as build-in current monitoring, temperature monitoring and over current protection which are important for high power SiC modules.

Source Turn-Off (STO) MOSFET: A New Driving Architecture for Smart SiC Module

Wide-bandgap GaN devices are emerging as promising candidates for high switching frequency, highvoltage applications, and high-temperature operation in smart power conversion systems. This work introduces a monolithic GaN MIS-HEMT-based voltage reference consisting of two transistors (2T), a D-mode and an E-mode device. Experimental results have been obtained that a 2.5 V reference voltage (VREF) is produced for a supply voltage ranging from 5 to 50 V, achieving a maximum VREF line sensitivity of 0.065%/V and a temperature coefficient of 24.6~28.6 ppm/°C from −25 to 225 °C. This structure also shows competitive levels of uniformity, power consumption and flexibility. With the superior characteristics of the GaN device, the presented results will provide stable reference voltage in various sensing and biasing circuits, especially for GaN power ICs.

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3kV 6.7MΩ·cm² 4H-SiC BJT with an Effective Junction Termination Extension (JTE)

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