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IEEE WiPDA 2022

Evolution of SiC substrate production understanding and managing defects in SiC

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

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IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

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Download the proceedings [here](https://underline.io/events/372/lounge)
 
 
 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

You must register to attend this event. If you haven't done so already, please use the link below to register for the event. All registered attendees will have access to the event site on November 4th.

Registration Is Required

In this paper, an implantation-free 3 kV 4H-SiC Bipolar Junction Transistor (BJT) is designed, fabricated, and characterized. With a 40μm-wide Four-step Junction Termination Extension (JTE), an open base breakdown voltage (BVCEO) and an open emitter breakdown voltage (BVCBO) of more than 3000V are measured. The total width of the JTE is less than two times of the drift thickness (23μm), which can be considered as highly area efficient. The designed BJT has a 1.2μm narrow base width with 1×1017cm-3 doping, where implantation-free Ohmic contact was achieved. The BJT exhibits an excellent on-resistance of 6.7mΩ·cm2 for small size device and an on-resistance of 39.7mΩ·cm2 for large size device. The measured current gain for devices with additional anneal process is 21.

3kV 6.7MΩ·cm² 4H-SiC BJT with an Effective Junction Termination Extension (JTE)

High-speed and intelligent gate driver is the critical interface between power semiconductor devices and control signals to achieve low switching loss and intelligent protection. The proposed novel Source Turn-Off (STO) MOSFET is a driver integrated MOSFET architecture that can achieve ultra-fast turnon and turn-off operation beyond traditional voltage source gate driver approach. 1200V SiC STO half bridge was developed to demonstrate the concept. Faster switching speed and lower switching losses are demonstrated. The STO can be readily realized by using commercially available Si power MOS IC which can further enable intelligent functionalities such as build-in current monitoring, temperature monitoring and over current protection which are important for high power SiC modules.

Source Turn-Off (STO) MOSFET: A New Driving Architecture for Smart SiC Module

Wide-bandgap GaN devices are emerging as promising candidates for high switching frequency, highvoltage applications, and high-temperature operation in smart power conversion systems. This work introduces a monolithic GaN MIS-HEMT-based voltage reference consisting of two transistors (2T), a D-mode and an E-mode device. Experimental results have been obtained that a 2.5 V reference voltage (VREF) is produced for a supply voltage ranging from 5 to 50 V, achieving a maximum VREF line sensitivity of 0.065%/V and a temperature coefficient of 24.6~28.6 ppm/°C from −25 to 225 °C. This structure also shows competitive levels of uniformity, power consumption and flexibility. With the superior characteristics of the GaN device, the presented results will provide stable reference voltage in various sensing and biasing circuits, especially for GaN power ICs.

A 5 to 50 V, −25 to 225 °C, 0.065%/°C GaN MISHEMT Monolithic Compact 2T Voltage Reference

Bidirectional High Voltage Conversion Ratio High-Frequency DC/DC Converter with Low Number of Components

The wide-band gap devices can switch at a higher frequency with a higher dV/dt well as improve switching performance. The optimization of busbars can reduce the power loop parasitic which will reduce the overvoltages during the device’s state transient. Busbar is not only required to carry and distribute the current to the power module, but also need to provide a path for decouple the high-frequency current ringing and minimize the impact of high-frequency current coupling. This paper introduced a workflow of a high power three-phase inverter design by considering the power converter layout to achieve the maximum power and , and a compara

Busbar Design and Optimization for High Power Three-Phase Inverter with WBG Device

Application of wide band gap (WBG) devices in power electronics converters enable high frequency and high-speed operation, together with reduced conduction losses. Gallium-Nitride (GaN) devices are more promising as they offer low chip area, and stable variation of channel resistance. Such devices can be employed in current source inverters (CSI) where two of them need to be connected in anti-series to make a reverse voltage blocking (RVB) switch. RVB switches are not only important in CSIs, but also find their applications in matrix converters, high voltage DC circuit breakers and T-type voltage source inverters. This paper discusses a switching event comprising of turn-on and turn-off phenomenon in RVB switch. Since the impact of layout parasitic onto gate drivers has been a common issue for GaN based converters, the paper presented a switching events, and discussed all the contributors which help or worsen the driving of bi-directional switches.

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3kV 6.7MΩ·cm² 4H-SiC BJT with an Effective Junction Termination Extension (JTE)

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