France

Power modules play a main role in traction inverter applications. They control engine speed and torque, regulating the energy flow between battery and motor. Due to the demanding electric and reliability performances requested by end costumers, semiconductor devices based on wide band gap compound are introduced in novel power modules. To support such device developments, there is the need to set a robust and accurate experimental methodology that shall be supported by numerical models. The targets are the prediction of thermal performance and the reliability forecast. In this framework, it has been proposed a dedicated flow to thermally characterize a multi-chip SiC MOSFET power module for automotive applications. Body-diode drop voltage has been selected as the temperature sensitive electric parameter to monitor the average junction temperature for thermal impedance measurements. Finite element model has been employed to predict temperature distribution due to device self-heating, referring to the previous characterization for the calibration of the numerical model. Once the thermal simulation methodology has been set, module temperature during inverter operations can be calculated, collecting temperature history profile into some loading conditions using a Rainflow-like approach. The several loading cases have been characterized by different temperature swing and cycle time. These classified data can be considered to evaluate lifetime duration due to selected failure mechanisms , supporting the definition of the most proper durability assessment for the application-relevant failure modes.

ESSCIRC ESSDERC Educational Events

Structural characterization and simulation of a direct-cooled power module

therma characterization

power module

finite element analysis

reliability

#### Welcome to the 60th IEEE International Reliability Physics Symposium (IRPS)!

[![](https://assets.underline.io/uploads/markdown_image/1/image/f6b8cf9ecca2209dd3e0fcebe80a2915.png)](https://underline.io/events/282/reception) [![](https://assets.underline.io/uploads/markdown_image/1/image/e787ff477f8d2b687fb0b54d83d35e11.png)](https://drive.google.com/drive/folders/1GAycr7pPrZG2ZzZP-geUL8vGWswjCB1N?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/7492fafcc0c623afe96fe15207855ed9.png)](https://www.irps.org/)
 

**General Chair Welcome Message**

Welcome to IRPS 2022! When the IRPS Management Committee began making plans for Dallas, we recognized the strong desire by the reliability physics community to return to a face-to-face symposium that we last had in Monterey in 2019. But as time progressed, we recognized that travel restrictions were not being lifted as rapidly as we anticipated. Rather than leave out those of you who could not attend in person, we adopted a hybrid format allowing for both remote attendance and remote presentations. This is a first for IRPS and I am confident it will be a success for all.

With this new hybrid format, the symposium will return to the original five-day format with Tutorials and Year in Review on the first two days. The Technical Program, Keynote Talks, Workshops and Poster session will be held on the following three days. All of these (except Workshops and Posters) will be available via real-time streaming in the US Central Time zone with virtual attendees having Q&A access to the presenters. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees for a month after the symposium with the ability to communicate with the authors.

In 2020, we were planning on co-hosting the International ESD Workshop (IEW) ESD workshop when the COVID-19 pandemic hit. For 2022, IEW will be seamlessly embedded into the IRPS Program and will sponsor three tutorials, an invited talk, two technical sessions and two evening workshops focused on ESD and latch-up. And we continue our
collaboration with our sister conference, European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF) by hosting their Best Paper and the International Integrated Reliability Workshop (IIRW) by hosting their Best Student Paper.

Our primary objective is to maintain the symposium’s leadership role in the reliability physics of microelectronic devices by attracting leading researchers to present their work and providing attendees the best place to access this information. With all the buzz in the media about whether Moore’s Law has hit its limit, IRPS has been promoting expertise developed in silicon-based reliability over the past sixty years and expanding into new material areas. This year, eight of the technical sessions are devoted to reliability in topics outside of traditional silicon, including wide bandgap GaN/SiC, emerging memory and neuromorphic computing. I hope our ability to draw these communities together will accelerate the cross-fertilization of ideas. 

The Technical Program consists of four keynote speakers, twenty-three invited speakers and eighty-seven oral presentations organized in thirty technical sessions on eighteen reliability topics. Over two evenings, there will be ten Workshops and sixty-six Poster presentations that are designed to allow in person attendees and experts to interact
with one another. With eighteen tutorials covering topics ranging from fundamental transistor and memory reliability all the way up to automotive and complex system-level reliability, this year’s symposium provides an excellent learning opportunity for engineers and scientists new to reliability as well as experienced individuals wanting to explore new
areas. The Year in Review, which serves as a summary of research in the past year, will cover 3D packaging, emerging memory and aging aware circuit designs.

Finally, I would like to express my extreme gratitude to our patrons and exhibitors, whose support makes IRPS possible.
And to all of you, our in person and virtual attendees, for supporting this symposium for sixty years!

**Charles W. Slayman, General Chair** 
**of 2022 IRPS Management Committee**
 
**About IRPS**

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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IRPS 2022 Main Conference 

IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021 
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021 
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021 
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021 
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Please register for the ESSCIRC/ESSDERC Educational Events to join the event.

The Educational Events of ESSCIRC ESSDERC 2021. 

In an industry wide consensus perpendicular spin-transfer-torque magnetic random-access memory (pSTT-MRAM) has matured to the memory of choice for replacing embedded FLASH solutions in the 2X nm technology nodes and beyond. However, especially this first entry point as a replacement for solder-reflow-capable eFLASH implies stringent requirements when it comes to high temperature data storage capabilities. In highly scaled pSTT-MRAM this demanding non-volatility can only be achieved by advanced free layer engineering. This energy barrier modulation needs to be carefully balanced in the boundary conditions of power consumption and endurance requirements. Sustaining and predicting this balance already at film-level or during patterning will be highly rewarding for the reliable manufacturing of this new technology. Here we present an early view on film-level and post-patterning magnetic metrology for embedded pSTT-MRAM.

Magnetic Metrology on Fully Integrated Embedded STT-MRAM

The architectural innovations of a new FPGA is presented.
The programmable Element, the routing structure and innovative switchboxes are explaned.

Novel Architecture for European FPGA

The modern world witnesses an ever-growing variety of consumer, home, automotive and industrial devices with network connectivity. 
Security is a crucial aspect in such systems and stakeholders will confirm that security constantly evolving. 
Therefore, NXP is very much involved in developing resilient, secure and trustworthy products that are a crucial building block for European data sovereignty. 
This results in the foundation that our customers use to build secure products.

In this presentation we will highlight the contributions of NXP Semiconductors Austria in the scope of IPCEI. 
This ranges from implementation security for high security products like Roots of Trust, 
over safe and secure battery management system for the green revolution as well as innovative 
application of technology for security use cases like Ultra-Wide-Band (UWB) radio for car access.

A connected world – Why security matters

5G standards effective deployment drives considerable technology challenges and implications on mobile devices design and requires innovative solutions to solve them. 
At the RF Front End Modules (FEM) level, the usage of new frequency bands, the complex use of the frequency bands (Carrier Aggregation, MIMO, QAM) and the coexistence with 4G networks are challenging the limits of existing acoustic filter technologies. 
A promising approach combining a thin single crystal LiTaO3 layer bonded on a Silicon substrate - so called Piezo On Insulator (POI) – together with the existing Surface Acoustic Wave (SAW) filter technology, enables to take advantage of guided waves that do not suffer from any radiation leakage. This SAW on POI approach will extend the use of the existing SAW technologies for higher performance integrated acoustic devices.
Triggered by the 5G filter market demand, the Smart CutTM technology has enabled high performance POI substrates supply chain in volume manufacturing, and paves the way to new design approaches for many applications beyond the Smartphone market.


Smart CutTM Piezo On Insulator (POI) substrates for high performance integrated acoustic devices

The IPCEI program at GF includes innovation along all technology readiness levels (TRLs). One example for very low TRL is the Reconficurable FET based on Schottky Barriers, close to 22FDX-processing. It enables camouflaging circuits for security applications, by e.g. providing NAND or NOR type cells, that can not be identified by reverse engineering. Another example is the development of a mmWave-variant of 22FDX allowing for operation frequencies typically in the 28-80 GHz regime, but also ranging up to 140 GHz. Characterisation of devices up to 3-4 times the operational frequency, a prerequisite for operation of the devices at these frequencies and showcases in the GHz regime for auto-Radar, 5 G and imaging radar are shown. These are just two examples, how the energy efficient 22FDX-technology at GF is enrichened by specialized variants and applications-specific- features.

Novel devices for security and showcases for mmwave with 22FDXTM

STMicroelectronics has developed a new generation of 40nm CMOS technology with embedded Non Volatile Memory targeted to support advanced Microcontrollers platforms. The presentation will briefly describe the very first implementation done with a standard Flash memory with high density but limited granularity (sector erase). We’ll then detail a second step, with a new NVM cell (eSTMTM) integrating a vertical select transistor to offer density similar to standard flash, but better erase control and granularity, that have been integrated in different IP blocks to suit MCU requirements. A latest step, will then be explained, showing further area reduction, as well as some perspective for generation ahead. From a circuit point of view, General Purpose MCUs done, with the initial technology, include a dual core for optimized performance and pass the 1000 DMips mark, while a derived version, using the optimized eSTMTM NVM cell, offer a 30% power consumption reduction. For secure MCU, 3 main applications have been targeted using the 40nm eSTMTM technology: circuit for contactless payment cards with biometry, harvesting enough energy to support a finger print sensor and verification, a circuit for embedded SIM with large NVM to allow high security loading and storage of virtual SIM cards and finally a combined embedded Secure Element and NFC controller (using the smallest eSTMTM cell) to support contactless applications in mobile phone such as payment, access control… Market for each applications represents hundreds of millions of circuits every year requiring robust, reliable and cost effective eNVM technologies.

Advanced Embedded Non-Volatile Memory solutions for General Purpose & Secure Microcontrollers

To address the increasingly challenging requirements of the RF front-end (RFFE) for 5G and also anticipated requirements for 6G, the 3D heterogeneous integration of GaN HEMT coupons on a RF-SOI technology is sought for combining the advantages of a high performance RF component and a capable Si based platform. Integration is performed at the transistor level rather than at a functional block level with conventional packaging methods. High performance RF passives, analogue, digital, and I/O functionality is performed by a 130nm RF-SOI technology with Cu and thick Cu metallurgy. GaN HEMT devices are instantiated as necessary to achieve design targets. Several examples of design innovation have been recently demonstrated by X-FAB including a 5.9-7.1GHz High-Linearity LNA, where the first stage cascode combines a HEMT and a Si NMOS exploiting higher output power and linearity of GaN. The second example is a SPST switch, where reduced insertion losses were observed in comparison to GaN on Si as a benefit of the integration method and also a significantly larger power handling capability than a Si counterpart. This discussion will include the present status and remarks on the future of this enabling technology.

multi-technology wafer level integration for RFFE applications

Both in Mobile and High-performance Computing (HPC) applications, efficient power supply of the processors was and is still being a big challenge for designers. Indeed, for these applications the power consumption is increasing while the power supply voltage is decreasing in alignment with the latest technological scaling. Thus, lowering and flattening the Power Distribution Network (PDN) impedance is more than ever important to mitigate the voltage fluctuation, the resonance and anti-resonance peaks caused by the PDN’s components. Such optimization is done by tuning the features of the different decoupling capacitors used along the power path from the power supply down to the processor. In this presentation, the benefits of using Low ESL silicon capacitors are demonstrated and compared to existing classical decoupling solutions. These components bring unprecedented design flexibility and significant improvements by reducing the voltage drop and enabling very low and flat PDN impedance.

Low ESL Ultra-thin silicon capacitors for PDN applications

Microelectronics plays a key role in fighting against global warming and preparing the world for the “post carbon age”. The performance of novel electronic based systems is constantly increasing by consuming less energy. This can be only achieved by novel systems that are designed in a holistic approach (Chip, passive components, package). The electronic package and interconnect solutions are contributing to these goals in a significant way. Besides this product focused potential for green electronics production and manufacturing of those is offering significant potential as well. Novel methods with respect to sustainable manufacturing have been achieved in this field and is contributing to reduce resource consumption in during production of electronic based systems of the future. These novel PCB and Packaging solutions as well as sustainable production concepts for them are under development in AT&S under IPCEI Microelectronic Project and will be presented in this talk.

PCB and packaging solutions for Green electronics

The usual amounts of data continue to grow exponentially. ICT currently consumes around 4% of the world's energy. Therefore one of the goals of the EU project “IPCEI” is a significant improvement the carbon footprint of digitization with the help of innovative Power semiconductors. In one example this goal will be addressed by increasing efficiency using the future generations of gallium nitride (GaN) technologies and housings for the electronics industry in Europe. In addition to circuit breakers for highly efficient energy conversion, inexpensive GaN on silicon high-frequency technologies will be developed, which accelerate the 5G expansion. Due to the large energy requirement, an efficiency improvement of only one percentage point results in a saving of approx. 10 megatons of CO2.
In this way, ICT can not only make many applications more “gree”, it can also become more “green” itself.

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