![profile picture](https://assets.underline.io/profile/166976/square_avatar/medium-0ddfd7c09b6adb23a1dd57b0f7761d1e.jpg)
Khandker A. Aabrar
Georgia Insitute of Technology
hzo
ferroelectric
polarization
5
presentations
2
number of views
SHORT BIO
Publication Topics:<br> field effect transistors,deep learning (artificial intelligence),silicon-on-insulator,III-V semiconductors,MOSFET,cryogenic electronics,electronic engineering computing,elemental semiconductors,ferroelectric storage,indium compounds,integrated circuit design,AI chips,CMOS analogue integrated circuits,CMOS memory circuits,DRAM chips,cache storage,content-addressable storage,ferroelectric capacitors,ferroelectric devices,field effect MIMIC,gallium compounds,hardware accelerators,high electron mobility transistors,integrated circuit modelling,learning (artificial intelligence)
Presentations
![](https://assets.underline.io/lecture/53597/poster_document_thumbnail_extract/medium-c81060fe319bd63b5ffd4117abd8cba6.jpg)
Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory Implications for Partial State Storage
Hossain Mir Muntasir and 8 other authors