France

Enabling the efficient processing of deep neural networks (DNNs) has becoming increasingly important to enable the deployment of DNNs on a wide range of platforms, for a wide range of applications. To address this need, there has been a significant amount of work in recent years on designing DNN accelerators and developing approaches for efficient DNN processing that spans the computer vision, machine learning, and hardware/systems architecture communities. Given the volume of work, it would not be feasible to cover them all in a single talk. Instead, this talk will focus on *how* to evaluate these different approaches, which include the design of DNN accelerators and DNN models. It will also highlight the key metrics that should be measured and compared and present tools that can assist in the evaluation.

ESSCIRC ESSDERC Educational Events

How to Evaluate Efficient Deep Neural Network Approaches

accelerators

in-memory computing

deep neural networks

#### Welcome to the 60th IEEE International Reliability Physics Symposium (IRPS)!

[![](https://assets.underline.io/uploads/markdown_image/1/image/f6b8cf9ecca2209dd3e0fcebe80a2915.png)](https://underline.io/events/282/reception) [![](https://assets.underline.io/uploads/markdown_image/1/image/e787ff477f8d2b687fb0b54d83d35e11.png)](https://drive.google.com/drive/folders/1GAycr7pPrZG2ZzZP-geUL8vGWswjCB1N?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/7492fafcc0c623afe96fe15207855ed9.png)](https://www.irps.org/)
 

**General Chair Welcome Message**

Welcome to IRPS 2022! When the IRPS Management Committee began making plans for Dallas, we recognized the strong desire by the reliability physics community to return to a face-to-face symposium that we last had in Monterey in 2019. But as time progressed, we recognized that travel restrictions were not being lifted as rapidly as we anticipated. Rather than leave out those of you who could not attend in person, we adopted a hybrid format allowing for both remote attendance and remote presentations. This is a first for IRPS and I am confident it will be a success for all.

With this new hybrid format, the symposium will return to the original five-day format with Tutorials and Year in Review on the first two days. The Technical Program, Keynote Talks, Workshops and Poster session will be held on the following three days. All of these (except Workshops and Posters) will be available via real-time streaming in the US Central Time zone with virtual attendees having Q&A access to the presenters. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees for a month after the symposium with the ability to communicate with the authors.

In 2020, we were planning on co-hosting the International ESD Workshop (IEW) ESD workshop when the COVID-19 pandemic hit. For 2022, IEW will be seamlessly embedded into the IRPS Program and will sponsor three tutorials, an invited talk, two technical sessions and two evening workshops focused on ESD and latch-up. And we continue our
collaboration with our sister conference, European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF) by hosting their Best Paper and the International Integrated Reliability Workshop (IIRW) by hosting their Best Student Paper.

Our primary objective is to maintain the symposium’s leadership role in the reliability physics of microelectronic devices by attracting leading researchers to present their work and providing attendees the best place to access this information. With all the buzz in the media about whether Moore’s Law has hit its limit, IRPS has been promoting expertise developed in silicon-based reliability over the past sixty years and expanding into new material areas. This year, eight of the technical sessions are devoted to reliability in topics outside of traditional silicon, including wide bandgap GaN/SiC, emerging memory and neuromorphic computing. I hope our ability to draw these communities together will accelerate the cross-fertilization of ideas. 

The Technical Program consists of four keynote speakers, twenty-three invited speakers and eighty-seven oral presentations organized in thirty technical sessions on eighteen reliability topics. Over two evenings, there will be ten Workshops and sixty-six Poster presentations that are designed to allow in person attendees and experts to interact
with one another. With eighteen tutorials covering topics ranging from fundamental transistor and memory reliability all the way up to automotive and complex system-level reliability, this year’s symposium provides an excellent learning opportunity for engineers and scientists new to reliability as well as experienced individuals wanting to explore new
areas. The Year in Review, which serves as a summary of research in the past year, will cover 3D packaging, emerging memory and aging aware circuit designs.

Finally, I would like to express my extreme gratitude to our patrons and exhibitors, whose support makes IRPS possible.
And to all of you, our in person and virtual attendees, for supporting this symposium for sixty years!

**Charles W. Slayman, General Chair** 
**of 2022 IRPS Management Committee**
 
**About IRPS**

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

Please log in to explore this event. You need to log in with the email address you registered with. Access credentials have been sent to your email. 

Please log in to explore this event.

Registration for this conference has now closed. We appreciate your interest and hope to welcome you at a future event. If you’d like to hear about similar upcoming events, please check our website or join our mailing list.

Registration for this conference has now closed.

IRPS 2022 Main Conference 

IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021 
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021 
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021 
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021 
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Please register for the ESSCIRC/ESSDERC Educational Events to join the event.

The Educational Events of ESSCIRC ESSDERC 2021. 

Three key challenges in the design of modern closed-loop neurostimulators for the treatment of neurological disorders, such as intractable epilepsy, are discussed. The first challenge is the need for the best possible efficacy by implementing neuromodulation therapies that are custom-tailored for each patient. Here, the question of where to employ machine learning, whether within the medical device or remotely is addressed, with two energy-efficient implementation examples given: a long-effective-memory SVM and a spatiotemporal CNN. The second challenge is a clear patients’ preference for lower invasiveness – two methods are presented that enable selective recruitment of nerves by decomposing the stimulus signal as it is being delivered to the target. This allows to break the trade-off between invasiveness and selectivity, but requires complex stimulation waveforms applied concurrently with the neural activity recording. As a result, the third challenge is the need for tolerance to stimulation artifacts. Delta-sigma quantization techniques to track fast input transients, by adapting DAC step size, ADC reference voltage and ADC clock frequency, are presented to address this challenge.

Artificially-intelligent Closed-loop Neurostimulators for the Treatment of Neurological Disorders

In this talk, we present emerging technologies for implantable CMOS optoelectronics for interfacing to the brain.

Implantable Optoelectronics for Neural Interfaces

Commercial 5G services have been launched globally. Study and development for technologies toward the evolution of 5G are ongoing, taking into account issues in early 5G services and emerging market needs. In parallel, research focused on technologies and services beyond 5G and 6G is accelerating throughout the world. This presentation will explain NTT DOCOMO's views and our latest activities on 5G evolution and 6G.

5G evolution and 6G: benefits and challenges

In this presentation, background and motivation will be explained for mmW/THz wireless communication as well as basics of phased-array theory. The theoretical limitation and possible direction of mmW/THz wireless communication is discussed with a THz phased-array transceiver implemented by 65nm CMOS.


Millimeter-wave/THz Phased-Array Transceiver for Beyond 5G

There is a rapidly increasing interest in beyond-5G and 6G wireless networks for the next-generation communication and sensing platform. It is envisioned that the upper mm-Wave and sub-THz frequencies (e.g. 100GHz to 240GHz) spectrum will be the major spectrum of interest due their abundant available bandwidth (BW) to achieve the “holy grail” of 1Tb/s wireless network throughput. It is also expected that large-scale arrays with massive elements will be a necessity and ubiquitously to provide huge array gains and compensate for the high-frequency path loss.
However, a major challenge at the physical layer for these beyond-5G and 6G networks is the lack of energy-efficient, wideband, and ultra-compact frontend electronics, in particular power amplifiers, at high mm-Wave/sub-THz. This is even more problematic for large-scale densely-packed arrays, where thermal management becomes a severe issue. Further, next-generation wireless links demand ultra-wideband modulations and high efficiency, while radar/imaging/sensing systems require large instantaneous BW. Despite of decades of research on integrated power amplifiers, most of these efforts have focused on RF and mm-Wave PAs, while high mm-Wave/sub-THz PAs entail distinct challenges at both device and circuit levels. In this talk, we will review the current state of the art of the high mm-Wave and sub-THz frequencies PAs, including PAs in both silicon and III-V technologies. A variety of challenges and performance limitations will be outlined. Then, we will present several recently published mm-Wave/sub-THz PA designs as examples to showcase the present capabilities. Future technology trends and potential devices/circuits solutions will be discussed as well.


Millimeter Wave and Sub-THz Power Amplifiers ― Enabling Technologies for Beyond-5G and 6G Wireless Networks

Future wireless standards require RF-sampling data converters to enable flexible multi-band operation over several GHz of instantaneous bandwidth. Efficient hardware organization in multi-antenna systems additionally requires co-integration of potentially many ADCs and DACs in a single chip with powerful data processing in the most advanced CMOS technologies. Besides the data converters, also a very high-quality clock generation, as well as calibration infrastructure must be integrated alongside the data converters. In this presentation we look at design examples of high-performance building blocks for such systems that have been implemented in one of the latest CMOS generations, with special emphasis on the digital assistance aspect in a DSP-heavy environment.

DSP-assisted RF-sampling data converters for 5G soft radio and beyond

The millimeter-wave (mmWave) and terahertz (THz) bands offer enormous bandwidth that is unparalleled, compared to the bandwidth available at lower microwave bands. This bandwidth has significant impact on the performance of wireless systems. The larger the channel bandwidth, the higher the throughput of wireless communication systems, and the higher the resolution of radar sensor systems. 
For the development of mmWave and THz wireless systems, advanced packaging platforms are required for system-integration of the ICs, antennas and other components required for system functionality. However, these platforms, also called antenna-in-package (AiP) platforms in published literature must meet some key requirements.
In this talk, the packaging requirements for mmWave and THz wireless applications are extensively discussed.


Packaging requirements for mmW & THz wireless applications

This talk will discuss the challenges to design and implement THz circuits in CMOS, as well as a discussion on applications. It will give an overview of the research results in this field by the MICAS group of KU Leuven, Belgium

THz circuits and applications

This presentation provides an overview of InP HBT integrated circuit technologies for mmWave and THz applications. Transistor and circuit performance will be reviewed with an emphasis on power amplifiers at mmWave and sub-THz frequencies. Heterogeneous integration techniques using wafer-scale 3D integration and device-scale microtransfer printing are also described.

InP technologies for mmW & THz wireless applications

The terahertz frequency range provides abundant bandwidth (25GHz ~ 50 GHz) to achieve ultra-high-speed wireless communication and enables data rates up to and above 100 Gbps. In this talk, I will present our early work on THz imaging and sensing with CMOS and SiGe HBTs. I will then present 6G wireless transceivers and discuss their performance and link impairments. I start with link budget considerations and address design trade-offs with respect to the used technology. The radio front-ends are manufactured in a SiGe BiCMOS 0.13um technology and operate at a tunable carrier of 220–260 GHz. The modules achieve data-rates from 20 to 100 Gbps with an EVM from 7% to 17% at a 1-meter distance using 16-QAM. I will further present our work on polarization diversity MIMO systems above 200 GHz. The MIMO link is established using a circular dual-polarization Tx and a dual-polarization Rx module. The polarization-diversity (left-handed circular polarization and right-handed circular polarization) is provided by a lens-coupled circularly polarized on-chip antenna. With this system, two independent data-streams of 55 Gb/s each were transmitted in parallel over a 1-meter line-of-sight distance, achieving an aggregated record data-rate of 110 Gbps.

Downloads

Next from ESSCIRC ESSDERC Educational Events

Artificially-intelligent Closed-loop Neurostimulators for the Treatment of Neurological Disorders

Similar lecture

Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators

.css-70qvj9{display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;}Downloads

Next from ESSCIRC ESSDERC Educational Events

Artificially-intelligent Closed-loop Neurostimulators for the Treatment of Neurological Disorders

Similar lecture

Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators

Downloads